a p62t03gh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 12m fast switching characteristic i d 54a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice parameter rating halogen-free product drain current, v gs @ 10v 54 drain-source voltage 30 gate-source voltage + 20 storage temperature range drain current, v gs @ 10v 38 pulsed drain current 1 120 20 total power dissipation 47 -55 to 175 operating junction temperature range -55 to 175 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 4 201409034 g d s to-252(h) g d s g d s to-251(j) a p62t03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap62t03gj) are available for low-profile applications. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 12 m ? v gs =4.5v, i d =15a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 20 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 11.5 18 nc q gs gate-source charge v ds =20v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time v ds =15v - 6 - ns t r rise time i d =20a - 56 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 750 1200 pf c oss output capacitance v ds =25v - 190 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf r g gate resistance f=1.0mhz - 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =20a, v gs =0 v , - 30 - ns q rr reverse recovery charge di/dt=100a/s - 21 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap62t03gh/j-hf 2 4.surface mounted on 1 in 2 copper pad of fr4 board .
a p62t03gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 175 o c 10v 7.0v 5.0v 4.5v v g =3.0v 5 15 25 35 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 25 100 175 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 4 8 12 16 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.4 0.6 0.8 1 1.2 1.4 -50 25 100 175 t j , junction temperature ( o c) normalized v gs(th) .
ap62t03gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =2 0 v v ds =25v i d =20a 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 30 60 90 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =175 o c t j =25 o c v ds =5v 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse .
ap62t03gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 62t03gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 62t03gh ywwsss meet rohs requirement for low voltage mosfet only .
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